Design and analysis of SHE-assisted STT MTJ/CMOS logic gates

Abstract We have investigated the spin-Hall effect (SHE)-assisted spin transfer torque (STT) switching mechanism in a three-terminal MTJ device developed using p-MTJ (perpendicular magnetic tunnel junction) and heavy metal materials of high atomic number, which possesses large spin–orbit interaction. Using schematic complementary-metal-oxide-semiconductor (CMOS) logic, we designed three basic hybrid logic-in-memory structure-based logic gates NOR/OR, NAND/AND, XNOR /XOR. Then performances these are evaluated results compared with conventional CMOS-based terms power, delay, power delay product, count. From analysis, it is concluded that SHE-assisted STT MTJ/CMOS nonvolatile, consume less occupy smaller die area as to CMOS only gates.